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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 250 Vdc (Min) -- 2N6497 VCEO(sus) = 300 Vdc (Min) -- 2N6498 * Excellent DC Current Gain hFE = 10 - 75 @ IC = 2.5 Adc * Low Collector-Emitter Saturation Voltage @ IC = 2.5 Adc -- VCE(sat) = 1.0 Vdc (Max) -- 2N6497 VCE(sat) = 1.25 Vdc (Max) -- 2N6498 (1) Indicates JEDEC Registered Data. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data . . . designed for high voltage inverters, switching regulators and line-operated amplifier applications. Especially well suited for switching power supply applications. Preferred devices are Motorola recommended choices for future use and best overall value. High Voltage NPN Silicon Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS (1) REV 7 Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous -- Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating Symbol Symbol TJ,Tstg VCEO RJC VCB VEB PD IC IB - 65 to + 150 2N6497 80 0.64 350 250 2.0 5.0 10 6.0 1.56 Max 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS - 65 to + 150 2N6498 *Motorola Preferred Device 2N6497 2N6498* 80 0.64 400 300 2.0 5.0 10 6.0 CASE 221A-06 TO-220AB Order this document by 2N6497/D Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III I I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6497 2N6498 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) + 11 V Fall Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc) Storage Time (VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc) Rise Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Current-Gain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) (IC = 5.0 Adc, IB = 2.0 Adc) Collector-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) DC Current Gain (IC = 2.5 Adc, VCE = 10 Vdc) (IC = 5.0 Adc, VCE = 10 Vdc) Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 350 Vdc, VBE(off) = 1.5 Vdc) (VCE = 400 Vdc, VBE(off) = 1.5 Vdc) (VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) (VCE = 200 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (1) (IC = 25 mAdc, IB = 0) 2 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA tr, tf 10 ns DUTY CYCLE = 1.0% t, TIME ( s) 0 (IC = 5.0 Adc, IB = 2.0 Adc) - 9.0 V 25 s v Figure 1. Switching Time Test Circuit [ [ v Characteristic RB [ 20 - 5.0 V D1 VCC + 125 V v 2.0%. RC [ 50 SCOPE 2N6497 2N6498 All Devices 2N6497 2N6498 2N6497 2N6498 2N6497 2N6498 0.01 0.05 0.07 0.1 0.02 0.03 0.07 0.05 0.1 0.2 0.3 1.0 0.7 0.5 VCEO(sus) VCE(sat) VBE(sat) Symbol Motorola Bipolar Power Transistor Device Data IEBO ICEX Cob hFE fT ts tr tf VCC = 125 V IC/IB = 5.0 TJ = 25C 2.0 3.0 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) td @ VBE(off) = 5.0 V Min 250 300 5.0 10 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- tr 0.45 Typ 1.4 0.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.0 1.25 5.0 Max 150 1.0 2.5 1.0 1.5 2.5 1.0 1.0 1.0 10 10 75 -- -- -- -- mAdc mAdc MHz Unit Vdc Vdc Vdc pF s s s -- Figure 2. Turn-On Time 5.0 2N6497 2N6498 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.05 0.02 t1 SINGLE PULSE t2 SINGLE PULSE P(pk) RJC(max) = 1.56C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) D = 0.5 0.2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 3. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 TC = 25C BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT dc 5.0 ms 1.0 ms 100 s CURVES APPLY BELOW RATED VCEO 2N6497 2N6498 0.02 20 30 5.0 7.0 10 50 70 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.05 500 Figure 4. Active-Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6. v POWER DERATING FACTOR (%) 10 7.0 5.0 3.0 t, TIME ( s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.1 100 ts VCC = 125 V IC/IB = 5.0 TJ = 25C SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 tf 20 0 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 5. Turn-Off Time Figure 6. Power Derating Motorola Bipolar Power Transistor Device Data 3 2N6497 2N6498 100 70 hFE, DC CURRENT GAIN 50 25C 30 20 - 55C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150C 4.0 TJ = 25C 3.2 VCE = 10 V 2.4 1.6 IC = 1.0 A 0.8 2.0 A 3.0 A 5.0 A 10 7.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 0 0.01 0.02 0.05 0.5 0.1 0.2 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 Figure 7. DC Current Gain Figure 8. Collector Saturation Region 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 + 4.0 + 3.0 + 2.0 + 1.0 0 *VC for VCE(sat) *APPLIES FOR IC/IB v hFE @ VCE + 10 V 3 25C to 150C VBE(sat) @ IC/IB = 5.0 VBE @ VCE = 10 V - 55C to 25C - 1.0 - 2.0 VB for VBE 25C to 150C - 55 to 25C - 3.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 5.0 0.2 0.3 0.5 0.7 1.0 IC/IB = 2.5 2.0 3.0 5.0 0 0.05 0.07 0.1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages Figure 10. Temperature Coefficients 104 IC, COLLECTOR CURRENT ( A) 103 102 101 100 10-1 10-2 - 0.1 25C REVERSE - 0.2 FORWARD 0 + 0.2 + 0.4 + 0.6 VCE = 200 V C, CAPACITANCE (pF) 1000 700 500 300 200 TJ = 25C 100 70 50 30 20 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 60 100 VR, REVERSE VOLTAGE (VOLTS) 200 400 Cob Cib TJ = 150C 100C VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cutoff Region Figure 12. Capacitance 4 Motorola Bipolar Power Transistor Device Data 2N6497 2N6498 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 2N6497 2N6498 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N6497/D* 2N6497/D |
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